- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33300 > 2N7620M2 800 mA, 60 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2N7620M2 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 60 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | HERMETIC SEALED, FLAT PACK-14 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 223K |
| 代理商： | 2N7620M2 |
www.irf.com
9
Pre-Irradiation
IRHLA770Z4, 2N7620M2
Pulse width ≤ 300 s; Duty Cycle ≤ 2%
Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L= 50mH
Peak IL = 0.8A, VGS = 10V
ISD ≤ 0.8A, di/dt ≤ 230A/s,
VDD ≤ 60V, TJ ≤ 150°C
Footnotes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2008
Case Outline and Dimensions — 14-Lead FlatPack
LEAD ASSIGNMENT
LEGEND
D = DRAIN, S = SOURCE , G = GATE, NC = NO CONNECTION
CHANNELS
N Channel = Q1,Q2, Q3 and Q4
D4
S4
G4
NC
S3
Q1
Q4
Q2
Q3
G3
D3
D1
S1
G1
D2
S2
G2
NC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N7624U3 | 22 A, 60 V, 0.072 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2N779A | 100 mA, 15 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N834 | NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N851 | 200 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-50 |
| 2N869A | 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7622U2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) |
| 2N7632UC | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET |
| 2N7635-GA | 功能描述:兩極晶體管 - BJT SiC High Temp SJT 650V 4A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N7636-GA | 功能描述:兩極晶體管 - BJT SiC High Temp SJT 650V 4A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N7637-GA | 功能描述:兩極晶體管 - BJT SiC High Temp SJT 650V 7A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。