參數(shù)資料
型號(hào): 2N7620M2
元件分類: 小信號(hào)晶體管
英文描述: 800 mA, 60 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: HERMETIC SEALED, FLAT PACK-14
文件頁數(shù): 5/9頁
文件大?。?/td> 223K
代理商: 2N7620M2
www.irf.com
5
Pre-Irradiation
IRHLA770Z4, 2N7620M2
Fig 8. Typical Threshold Voltage Vs
Temperature
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 5. Typical On-Resistance Vs
Gate Voltage
Fig 6. Typical On-Resistance Vs
DrainCurrent
2
3
4
5
6
7
8
9
10 11 12
VGS, Gate -to -Source Voltage (V)
0
0.5
1.0
1.5
2.0
2.5
3.0
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
)
ID = 0.8A
TJ = 25°C
TJ = 150°C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
ID, Drain Current (A)
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
)
TJ = 25°C
TJ = 150°C
Vgs = 4.5V
-60 -40 -20
0
20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
50
60
70
80
V
(B
R
)D
S
,D
ra
in
-t
o-
S
ou
rc
e
B
re
ak
do
w
n
V
ol
ta
ge
(V
)
ID = 1.0mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
G
S
(t
h)
G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(V
)
ID = 50A
ID = 250A
ID = 1.0mA
ID = 150mA
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