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參數(shù)資料
| 型號： | 2N7620M2 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 60 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | HERMETIC SEALED, FLAT PACK-14 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 223K |
| 代理商： | 2N7620M2 |
www.irf.com
3
Pre-Irradiation
IRHLA770Z4, 2N7620M2
Radiation Characteristics
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Fig a. Typical Single Event Effect, Safe Operating Area
Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 300K Rads (Si)1
Units
Test Conditions
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
60
—
V
VGS = 0V, ID = 250A
VGS(th)
Gate Threshold Voltage
1.0
2.0
VGS = VDS, ID = 250A
IGSS
Gate-to-Source Leakage Forward
—
100
nA
VGS = 10V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -10V
IDSS
Zero Gate Voltage Drain Current
—
1.0
A
VDS= 48V, VGS= 0V
RDS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
—
0.60
VGS = 4.5V, ID = 0.5A
RDS(on)
Static Drain-to-Source On-state
VSD
Diode Forward Voltage
—
1.2
V
VGS = 0V, ID = 0.8A
Resistance (14-Lead Flat Pack)
—
0.60
VGS = 4.5V, ID = 0.5A
1. Part numbers IRHLA770Z4, IRHLA730Z4
0
10
20
30
40
50
60
70
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
VGS
VD
S
Br
I
Au
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm
2))
(MeV)
(m)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V
-2V
-4V
-5V
-6V
-7V
-8V
-10V
Br
37
305
39
60
35
30
20
I
60
370
34
60
20
15
-
Au
84
390
30
60
-
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| 2N7636-GA | 功能描述:兩極晶體管 - BJT SiC High Temp SJT 650V 4A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N7637-GA | 功能描述:兩極晶體管 - BJT SiC High Temp SJT 650V 7A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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