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參數(shù)資料
| 型號(hào)： | XP1006-FA |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin |
| 中文描述： | 8.5-11.0 GHz的砷化鎵功率放大器法蘭，10針 |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 237K |
| 代理商： | XP1006-FA |
August 2006 - Rev 16-Aug-06
Page 5 of 6
MTTF
MTTF is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
8.5-11.0 GHz GaAs Power Amplifier
Flange, 10 pin
P1006-FA
XP1006-FA, MTTF with RF Power Applied
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
1.0E+04
1.0E+05
1.0E+06
20
30
40
50
Backplate Temperature (C)
60
70
80
90
100
110
120
M
100% DC duty cycle
50% DC duty cycle
30% DC duty cycle
10% DC duty cycle
XP1006-FA, MTTF without RF Power
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
1.0E+04
1.0E+05
20
30
40
50
60
70
80
90
100
110
120
Backplate Temperature (C)
M
100% DC duty cycle
50% DC duty cycle
30% DC duty cycle
10% DC duty cycle
App Note [1] Biasing -
This device is biased with Vd(1,2,3) = 8.0V and 4.0 A (pin 6,10). The drain current is controlled by the gate bias
with a typical value of Vg = -0.6V (pin 1). It is recommended to use active biasing to keep the currents constant as the RF power and
temperature vary; this gives the most reproducible results. The recommended power-up sequence is described below:
1. Apply -2.0 V to Vg
2. Apply +8.0 V to Vd(1,2,3)
3. Adjust Vg to achieve nominal drain current
4. Apply RF power
5. Re-adjust Vg to maintain nominal drain current.
Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low
power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT
is controlled to maintain correct drain current and thus drain voltage.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XP1006-FA-0N00 | 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin |
| XP1006-FA-EV1 | 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin |
| XP1006 | 8.5-11.0 GHz GaAs MMIC Power Amplifier |
| XP1008 | 11.0-16.0 GHz GaAs MMIC Power Amplifier |
| XP1009 | 17.0-21.0 GHz GaAs MMIC Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP1006-FA_07 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin |
| XP1006-FA-0N00 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin |
| XP1006-FA-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin |
| XP1008 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:11.0-16.0 GHz GaAs MMIC Power Amplifier |
| XP1009 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:17.0-21.0 GHz GaAs MMIC Power Amplifier |
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