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參數(shù)資料
| 型號(hào)： | XP1009 |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 17.0-21.0 GHz GaAs MMIC Power Amplifier |
| 中文描述： | 17.0-21.0 GHz的砷化鎵單片功率放大器 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 154K |
| 代理商： | XP1009 |
V eloc ium Produc ts
18 - 20 GHz HPA
- APH478
17.0-21.0 GHz GaAs MMIC
Power Amplifier
Page 1 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2006 - Rev 10-May-06
P1009
Mimix Broadband’s two stage 17.0-21.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +38.0 dBm. This
MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
or eutectic solder die attach process. This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Absolute Maximum Ratings
General Description
Supply Voltage (Vd)
Supply Current (Id1,2)
Gate Bias Voltage
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+5.5 VDC
330,660 mA
+0.3 VDC
+12 dBm
-65 to +165
O
C
-55 to MTTF TAble
MTTF Table
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
3
Features
Excellent Linear Output Amplifier Stage
20.0 dB Small Signal Gain
+29.5 dBm P1dB Compression Point
+38.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
3
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id) (Vd=5.0V, Vg=-0.3V Typical)
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
VDC
VDC
mA
Min.
17.0
-
-
-
-
-
-
-
-
-1.0
-
Typ.
-
8.0
7.0
20.0
+/-0.5
-
+29.5
+38.0
+5.0
-0.3
900
Max.
21.0
-
-
-
-
-
-
-
-
0.0
-
(1) Measured at +18 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
1,2
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XP1010 | 21.0-24.0 GHz GaAs MMIC Power Amplifier |
| XP1011 | 36.0-40.0 GHz GaAs MMIC Power Amplifier |
| XP1012 | 37.0-40.0 GHz GaAs MMIC Power Amplifier |
| XP1013 | 17.0-26.0 GHz GaAs MMIC Power Amplifier |
| XP1014 | 8.5-11.0 GHz GaAs MMIC Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP1010 | 制造商:MIMIX 制造商全稱(chēng):MIMIX 功能描述:21.0-24.0 GHz GaAs MMIC Power Amplifier |
| XP1010-RDB | 制造商:Freescale Semiconductor 功能描述: |
| XP1011 | 制造商:MIMIX 制造商全稱(chēng):MIMIX 功能描述:36.0-40.0 GHz GaAs MMIC Power Amplifier |
| XP1011-BD | 制造商:MIMIX 制造商全稱(chēng):MIMIX 功能描述:36.0-40.0 GHz GaAs MMIC Power Amplifier |
| XP1011-BD-000V | 制造商:MIMIX 制造商全稱(chēng):MIMIX 功能描述:36.0-40.0 GHz GaAs MMIC Power Amplifier |
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