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參數(shù)資料
| 型號： | XP1006 |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 8.5-11.0 GHz GaAs MMIC Power Amplifier |
| 中文描述： | 8.5-11.0 GHz的砷化鎵單片功率放大器 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 252K |
| 代理商： | XP1006 |
XP1006
MIMIX BROADBAND
10004966
TNO COPYRIGHT 2005
X=4940
Y=4290
8.5-11.0 GHz GaAs MMIC
Power Amplifier
Page 1 of 6
Chip Device Layout
P1006
March 2006 - Rev 13-Mar-06
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Mimix Broadband
’
s three stage 8.5-11.0 GHz GaAs
MMIC power amplifier has a large signal gain of 21.0
dB with a +40.0 dBm saturated output power and also
includes on-chip gate bias circuitry. This MMIC uses
Mimix Broadband
’
s 0.5 m GaAs PHEMT device model
technology, and is based upon optical gate
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This
device is well suited for radar applications.
X-Band 10W Power Amplifier
21.0 dB Large Signal Gain
+40.0 dBm Saturated Output Power
30% Power Added Efficiency
On-chip Gate Bias Circuit
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Features
General Description
Electrical Characteristics
(Pulsed Mode F=10kHz, Duty Cycle=10%, T
A
=25oC)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Large Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Saturated Output Power (P
SAT
)
Power Added Efficiency (PAE)
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vgg)
Supply Current (Id) (Vd=8.0V, Vgg=-5.0V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
%
VDC
VDC
A
Min.
8.5
-
-
-
-
-
-
-
-
-6.0
-
Typ.
-
15.0
12.0
21.0
+/-0.5
60.0
+40.0
30
+8.0
-5.0
4.2
Max.
11.0
-
-
-
-
-
-
-
+9.0
-4.0
4.5
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+9.0 VDC
4.5 A
+0.0 VDC
TBD
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP1006-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:8.5-11.0 GHz GaAs MMIC Power Amplifier |
| XP1006-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:8.5-11.0 GHz GaAs MMIC Power Amplifier |
| XP1006-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:8.5-11.0 GHz GaAs MMIC Power Amplifier |
| XP1006-FA | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin |
| XP1006-FA_07 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin |
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