- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄231492 > WEDPND16M72S-250BM (MICROSEMI CORP-PMG MICROELECTRONICS) 16M X 72 DDR DRAM, 0.8 ns, PBGA219 PDF資料下載
參數(shù)資料
| 型號： | WEDPND16M72S-250BM |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 16M X 72 DDR DRAM, 0.8 ns, PBGA219 |
| 封裝： | 32 X 25 MM, PLASTIC, BGA-219 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 441K |
| 代理商： | WEDPND16M72S-250BM |
11
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WEDPND16M72S-XBX
250MHz
Parameter/Condition
Symbol 266MHz 200MHz Units
OPERATING CURRENT: One bank; Active-Precharge; tRC = tRC (MIN); tCK = tCK (MIN); DQ, DM, and DQS inputs
ICC0
600
575
mA
changing once per clock cyle; Address and control inputs changing once every two clock cycles; (22, 48)
OPERATING CURRENT: One bank; Active-Read-Precharge; Burst = 2; tRC = tRC (MIN); tCK = tCK (MIN);
ICC1
825
775
mA
IOUT = 0mA; Address and control inputs changing once per clock cycle (22, 48)
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; Power-down mode; tCK = tCK (MIN);
ICC2P
20
mA
CKE = LOW; (23, 32, 50)
IDLE STANDBY CURRENT: CS = HIGH; All banks idle; tCK = tCK (MIN); CKE = HIGH; Address and other control
ICC2F
200
mA
inputs changing once per clock cycle. VIN = VREF for DQ, DQS, and DM (51)
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active; Power-down mode; tCK = tCK (MIN);
ICC3P
150
125
mA
CKE = LOW (23, 32, 50)
ACTIVE STANDBY CURRENT: CS = HIGH; CKE = HIGH; One bank; Active-Precharge; tRC = tRAS (MAX);
ICC3N
225
200
mA
tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle; Address and other control
inputs changing once per clock cycle (22)
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One bank active; Address and control inputs
ICC4R
1250
1075
mA
changing once per clock cycle; tCK = tCK (MIN); IOUT = 0mA (22, 48)
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One bank active; Address and control inputs
I CC4W
1250
950
mA
changing once per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle (22)
AUTO REFRESH CURRENT
tRC = tRC (MIN) (27, 50)
ICC5
1225
1075
mA
tRC = 7.8125s (27, 50)
ICC5A
30
mA
SELF REFRESH CURRENT: CKE
0.2V
Standard (11)
ICC6
20
mA
OPERATING CURRENT: Four bank interleaving READs (BL=4) with auto precharge, tRC =tRC (MIN); tCK = tCK (MIN);
ICC7
2000
1875
mA
Address and control inputs change only during Active READ or WRITE commands. (22, 49)
Parameter/Condition
Symbol
Units
Min
Max
Supply Voltage
VCC
2.3
2.7
V
I/O Supply Voltage
VCCQ
2.3
2.7
V
Input High Voltage: Logic 1; All inputs (21)
VIH
VREF - 0.04
VREF + 0.04
V
Input Low Voltage: Logic 0; All inputs (21)
VIL
-0.3
VREF - 0.15
V
Input Leakage Current: Any input 0V
VIN VCC(Allotherpinsnotundertest=0V)
II
-2
2
A
Input Leakage Address Current (All other pins not under test = 0V)
II
-10
10
A
Output Leakage Current: I/Os are disabled; 0V
VOUT VCC
IOZ
-5
5
A
Output Levels: Full drive option - x4, x8, x16
High Current (VOUT = VCCQ - 0.373V, minimum VREF, minimum VTT)IOH
-16.8
-
mA
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT)IOL
16.8
-
mA
Output Levels: Reduced drive option - x16 only
High Current (VOUT = VCCQ - 0.763V, minimum VREF, minimum VTT)IOHR
-9
-
mA
Low Current (VOUT = 0.763V, maximum VREF, maximum VTT)IOLR
9-
mA
I/O Reference Voltage
VREF
0.49 x VCCQ
0.51 x VCCQ
V
I/O Termination Voltage
VTT
VREF - 0.04
VREF + 0.04
V
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (NOTES 1, 6)
(VCC = +2.5V ±0.2V; TA = -55°C TO +125°C)
ICC SPECIFICATIONS AND CONDITIONS (NOTES 1-5, 10, 12, 14)
(VCC = +2.5V ±0.2V; TA = -55°C TO +125°C)
MAX
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WF128K32N-150HSM5 | 512K X 8 FLASH 5V PROM MODULE, 150 ns, CPGA66 |
| WF2M16W-120FLC5 | 2M X 16 FLASH 5V PROM MODULE, 120 ns, CDFP44 |
| WMF256K8-120CLC5A | 256K X 8 FLASH 5V PROM, 120 ns, CQCC32 |
| WMF256K8-90FEI5A | 256K X 8 FLASH 5V PROM, 90 ns, CDFP32 |
| WMS512K8-15CQ | 512K X 8 STANDARD SRAM, 15 ns, CDIP32 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WEDPNF8M721V-1010BC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1010BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1010BM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1012BC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1012BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。