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參數(shù)資料
| 型號： | WEDPND16M72S-250BM |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 16M X 72 DDR DRAM, 0.8 ns, PBGA219 |
| 封裝： | 32 X 25 MM, PLASTIC, BGA-219 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 441K |
| 代理商： | WEDPND16M72S-250BM |
10
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
White Electronic Designs
WEDPND16M72S-XBX
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on VCC, VCCQ Supply relative to Vss
-1 to 3.6
V
Voltage on I/O pins relative to Vss
-1 to 3.6
V
Operating Temperature TA (Mil)
-55 to +125
°C
Operating Temperature TA (Ind)
-40 to +85
°C
Storage Temperature, Plastic
-55 to +150
°C
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
CAPACITANCE (NOTE 13)
Parameter
Symbol
Max
Unit
Input Capacitance: CLK
CI1
8pF
Addresses, BA0-1 Input Capacitance
CA
30
pF
InputCapacitance:Allotherinput-onlypins
CI2
9pF
Input/Output Capacitance: I/Os
CIO
12
pF
Description
Symbol Max Units Notes
Junction to Ambient
Theta JA
13.3
°C/W
1
(No Airflow)
Junction to Ball
Theta JB
9.9
°C/W
1
Junction to Case (Top)
Theta JC
3.8
°C/W
1
BGA THERMAL RESISTANCE
Note 1: Refer to AN #0001 at www.whiteedc.com in
the application notes section for modeling conditions.
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