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參數(shù)資料
| 型號： | WED9LAPC2C16V8BC |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA192 |
| 封裝： | 21 X 21 MM, BGA-192 |
| 文件頁數(shù)： | 8/24頁 |
| 文件大小： | 933K |
| 代理商： | WED9LAPC2C16V8BC |
16
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WED9LAPC2C16V8BC
July, 2000
Rev. 0
White Electronic Designs Corp. reserves the right to change products or specications without notice.
FIG. 9 SDRAM PAGE WRITE CYCLE AT DIFFERENT BANK @ BURST LENGTH = 4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
GCK
VCRAS#
VCCAS#
VCADDR
VCBS
VCADDR9/AP
VCDATA
VCWE#
VCDQM#
Row Active
(A-Bank)
Row Active
(B-Bank)
Write
(A-Bank)
Write
(A-Bank)
Write
(B-Bank)
Write
(B-Bank)
Precharge
(Both Banks)
DON’T CARE
Note 2
RAa
CAa
RBb
CBb
CBd
CAc
RAa
RBb
Note 1
tRDL
tCDL
DBb0
DBb1
DBb2
DBb3
DAc0
DAc1
DBd0
DBd1
DAa0
DAa1
DAa2
DAa3
NOTES:
1. To interrupt burst write by Row precharge, VCDQM# should be asserted to mask invalid input data.
2. To interrupt a burst read by Row precharge, both the read and the precharge banks must be the same.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WED9LAPC2C16V8BI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512K x 32 SSRAM / 1M x 64 SDRAM |
| WED9LAPC3C16V8BC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512K x 32 SSRAM / 1M x 64 SDRAM |
| WED9LAPC3C16V8BI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512K x 32 SSRAM / 1M x 64 SDRAM |
| WED9LC6416V | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM |
| WED9LC6416V1310BC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM |
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