參數(shù)資料
型號(hào): WED9LAPC2C16P8BI
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 4M X 32 SYNCHRONOUS DRAM, PBGA153
封裝: 14 X 22 MM, BGA-153
文件頁(yè)數(shù): 5/21頁(yè)
文件大?。?/td> 693K
代理商: WED9LAPC2C16P8BI
13
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WED9LAPC2B16P8BC
November 2001
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
FIGURE 7 – SDRAM PAGE READ CYCLE AT DIFFERENT BANK @ BURST LENGTH = 4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
GCK
VCRAS#
VCCAS#
VCADDR
VCBS
VCADDR9/AP
VCDATA
VCWE#
VCDQM#
CL = 2
CL = 3
Row Active
(A-Bank)
Row Active
(B-Bank)
Read
(A-Bank)
Read
(A-Bank)
Read
(A-Bank)
Read
(B-Bank)
Read
(B-Bank)
Precharge
(A-Bank)
DON’T CARE
Note 1
RAa
CAa
CBb
CBd
CAc
CAe
RBb
RAa
QAa0
QAa1
QAa2
QAa3
QBb0
QBb1
QBb2
QBb3
QAc0
QAc1
QBd0
QBd1
QAe0
QAe1
QAa0
QAa1
QAa2
QAa3
QBb0
QBb1
QBb2
QBb3
QAc0
QAc1
QBd0
QBd1
QAe0
QAe1
Note:
1. To interrupt a burst read by Row precharge, both the read and the precharge banks must be the same.
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