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參數資料
| 型號： | VNN3NV04 |
| 廠商： | 意法半導體 |
| 英文描述： | “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET |
| 中文描述： | “OMNIFET二”：充分AUTOPROTECTED功率MOSFET |
| 文件頁數： | 4/21頁 |
| 文件大小： | 418K |
| 代理商： | VNN3NV04 |
4/21
VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1
ELECTRICAL CHARACTERISTICS (continued)
(T
j
=25°C, unless otherwise specified)
DYNAMIC
SWITCHING
SOURCE DRAIN DIODE
PROTECTIONS (-40°C < T
j
< 150°C, unless otherwise specified)
Symbol
Parameter
I
lim
Drain Current Limit
Step Response Current
Limit
Overtemperature
Shutdown
T
jrs
Overtemperature Reset
I
gf
Fault Sink Current
(*) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
g
fs
(*)
Forward
Transconductance
Output Capacitance
V
DD
=13V; I
D
=1.5A
5.0
S
C
OSS
V
DS
=13V; f=1MHz; V
IN
=0V
150
pF
Symbol
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Parameter
Test Conditions
Min
Typ
90
250
450
250
0.45
2.5
3.3
2.0
Max
300
750
1350
750
1.35
7.5
10.0
6.0
Unit
ns
ns
ns
ns
μ
s
μ
s
μ
s
μ
s
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
=15V; I
D
=1.5A
V
gen
=5V; R
gen
=R
IN MIN
=220
(see figure 1)
V
DD
=15V; I
D
=1.5A
V
gen
=5V; R
gen
=2.2 K
(see figure 1)
(dI/dt)
on
Turn-on Current Slope
V
DD
=15V; I
D
=1.5A
V
gen
=5V; R
gen
=R
IN MIN
=220
V
DD
=12V; I
D
=1.5A; V
IN
=5V
I
gen
=2.13mA (see figure 5)
4.7
A/
μ
s
Q
i
Total Input Charge
8.5
nC
Symbol
V
SD
(*)
t
rr
Q
rr
I
RRM
Parameter
Test Conditions
Min
Typ
0.8
107
37
0.7
Max
Unit
V
ns
μ
C
A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=1.5A; V
IN
=0V
I
SD
=1.5A; dI/dt=12A/
μ
s
V
DD
=30V; L=200
μ
H
(see test circuit, figure 2)
Test Conditions
Min
3.5
Typ
5
Max
7
Unit
A
V
IN
=5V; V
DS
=13V
V
IN
=5V; V
DS
=13V
t
dlim
10
μ
s
T
jsh
150
175
200
°C
135
10
°C
mA
V
IN
=5V; V
DS
=13V; T
j
=T
jsh
starting T
j
=25°C; V
DD
=24V
V
IN
=5V R
gen
=R
IN MIN
=220
;
L=24mH
(see figures 3 & 4)
15
20
E
as
Single Pulse
Avalanche Energy
100
mJ
2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| VNN3NV04_09 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:OMNIFET II fully autoprotected Power MOSFET |
| VNN3NV0413TR | 功能描述:功率驅動器IC N-Ch 40V 3.5A Omni RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VNN3NV04PTR-E | 功能描述:功率驅動器IC OMNIFET III Low Side 120mOhm 3.5A 40V RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VNN3NV04TR-E | 功能描述:電源開關 IC - 配電 N-Ch 40V 3.5A Omni RoHS:否 制造商:Exar 輸出端數量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VNN7NV04 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:OMNIFET II fully autoprotected Power MOSFET |
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