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參數(shù)資料
| 型號(hào)： | VNN3NV04 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET |
| 中文描述： | “OMNIFET二”：充分AUTOPROTECTED功率MOSFET |
| 文件頁數(shù)： | 21/21頁 |
| 文件大?。?/td> | 418K |
| 代理商： | VNN3NV04 |
21/21
VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1
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| VNP10N06 | Fully Autoprotected Power MOSFET(全自動(dòng)保護(hù)功率MOSFET) |
| VNP10N07FI | Fully Autoprotected Power MOSFET(全自動(dòng)保護(hù)功率MOSFET) |
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| VNP14N04 | Fully Autoprotected Power MOSFET(全自動(dòng)保護(hù)功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VNN3NV04_09 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:OMNIFET II fully autoprotected Power MOSFET |
| VNN3NV0413TR | 功能描述:功率驅(qū)動(dòng)器IC N-Ch 40V 3.5A Omni RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VNN3NV04PTR-E | 功能描述:功率驅(qū)動(dòng)器IC OMNIFET III Low Side 120mOhm 3.5A 40V RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VNN3NV04TR-E | 功能描述:電源開關(guān) IC - 配電 N-Ch 40V 3.5A Omni RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VNN7NV04 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:OMNIFET II fully autoprotected Power MOSFET |
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