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參數(shù)資料
| 型號(hào)： | V62/05622-01XE |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 12 A SWITCHING REGULATOR, 762 kHz SWITCHING FREQ-MAX, PDSO28 |
| 封裝： | GREEN, PLASTIC, HTSSOP-28 |
| 文件頁數(shù)： | 20/24頁 |
| 文件大?。?/td> | 689K |
| 代理商： | V62/05622-01XE |
www.ti.com
SGLS294A – FEBRUARY 2005 – REVISED AUGUST 2007
ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Ramp valley(1)
0.75
V
Ramp amplitude (peak-to-peak)(1)
1
V
Minimum controllable on time(1)
200
ns
Maximum duty cycle(1)
90%
ERROR AMPLIFIER
Error amplifier open loop voltage gain
1 k
COMP to AGND(1)
90
110
dB
Error amplifier unity gain bandwidth
Parallel 10 k
, 160 pF COMP to AGND(1)
3
5
MHz
Error amplifier common mode input
Powered by internal LDO(1)
0
VBIAS
V
voltage range
Input bias current, VSENSE(4)
VSENSE = Vref
60
nA
Output voltage slew rate (symmetric),
1
1.4
V/s
COMP(1)
PWM COMPARATOR
PWM comparator propagation delay time,
PWM comparator input to PH pin
10-mV overdrive(1)
70
85
ns
(excluding deadtime)
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA
0.82
1.2
1.4
V
Enable hysteresis voltage, SS/ENA(5)
0.03
V
Falling edge deglitch, SS/ENA(5)
2.5
s
Internal slow-start time(6)
2
3.35
4.5
ms
Charge current, SS/ENA
SS/ENA = 0 V
2.5
5
8
A
Discharge current, SS/ENA
SS/ENA = 1.2 V, VI = 2.7 V
1.1
2.3
4
mA
POWER GOOD
Power good threshold voltage
VSENSE falling
90
%Vref
Power good hysteresis voltage(5)
3
%Vref
Power good falling edge deglitch(5)
35
s
Output saturation voltage, PWRGD
I(sink) = 2.5 mA
0.18
0.31
V
Leakage current, PWRGD
VI = 5.5 V
100
nA
CURRENT LIMIT
Current limit trip point
VI = 3 V
(5)
10
A
VI = 6 V
(5)
12
Current limit leading edge blanking time(5)
100
ns
Current limit total response time(5)
200
ns
THERMAL SHUTDOWN
Thermal shutdown trip point(5)
135
150
165
°C
Thermal shutdown hysteresis(5)
10
°C
OUTPUT POWER MOSFETs
VI = 6 V
(6)
26
51
rDS(on) Power MOSFET switches
m
VI = 3 V
(6)
36
67
(4)
Matched MOSFETs low-side rDS(on) production tested, high-side rDS(on) specified by design.
(5)
Specified by design
(6)
Matched MOSFETs low-side rDS(on) production tested, high-side rDS(on) specified by design.
Copyright 2005–2007, Texas Instruments Incorporated
5
Product Folder Link(s): TPS54610-EP
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