參數(shù)資料
型號: V59C1G01408QAJ37I
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: 256M X 4 DDR DRAM, 0.5 ns, PBGA68
封裝: ROHS COMPLIANT, FBGA-68
文件頁數(shù): 65/79頁
文件大?。?/td> 1029K
代理商: V59C1G01408QAJ37I
68
V59C1G01(408/808/168)QA Rev. 1.2 April 2008
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
DDR2-667/-800/-1066
(0 °C
TCASE 85 °C (tbd); VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1V)
Symbol
Parameter/Condition
I/O
-3
DDR2 -667
Unit
Notes
IDD0 Operating Current
x4/ x8
x16
1, 2
IDD1 Operating Current
x4/ x8
x16
mA
1, 2
IDD2P Precharge Power-Down Current
x4/ x8
x16
1, 2
IDD2N Precharge Standby Current
x4/ x8
x16
1, 2
IDD2Q Precharge Quiet Standby Current:
x4/ x8
x16
1, 2
IDD3P
Active Power-
Down Standby
Current
MRS(12)=0
all
1, 2
MRS(12)=1
all
1, 2
IDD3N Active Standby Current
x4/ x8
x16
1, 2
IDD4R Operating Current Burst Read
x4/x8
x16
1, 2
IDD4W Operating Current Burst Write
x4/x8
x16
1, 2
IDD5B
Burst Auto-Refresh Current
(tRFC=tRFCmin)
x4/x8
x16
IDD5D
Distributed Auto-Refresh Current
(tRFC=7.8s)
all
IDD6
Self-Refresh Current for standard
products
x4/x8
x16
IDD6
Self-Refresh Current for low
power products
all
1, 2
IDD7 Operating Current
x4/x8
x16
1
1. IDD specifications are tested after the device is properly initialized. IDD parameters are specified with ODT disabled.
2. Input slew rate = 1 V/ns.
1, 2
mA
90
10
mA
45
mA
33
mA
72
mA
270
mA
45
mA
8
mA
5
mA
220
260
mA
210
mA
260
mA
120
105
140
45
50
310
430
-25
DDR2 -800
100
130
115
150
340
480
270
240
290
50
55
38
75
250
290
38
33
-18
DDR2 -1066
110
155
120
170
370
500
290
270
350
60
55
70
46
85
270
330
46
10
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