參數(shù)資料
型號(hào)： V58C2512804SALS5I
廠商： PROMOS TECHNOLOGIES INC
元件分類： DRAM
英文描述： 64M X 8 DDR DRAM, 0.65 ns, PBGA60
封裝： MO-207, FBGA-60
文件頁(yè)數(shù)： 28/60頁(yè)
文件大?。?/td> 914K
代理商： V58C2512804SALS5I
34
V58C2512(804/404/164)SA*I Rev. 1.6 May 2007
ProMOS TECHNOLOGIES
V58C2512(804/404/164)SA*I
DC Operating Conditions & Specifications
DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS=0V, TA= -40 to +85°C)
Notes: 1. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the DC level of the same. Peak-
to-peak noise on VREF may not exceed 2% of the DC value
2.VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to
VREF, and must track variations in the DC level of VREF
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage (for device with a nominal VDD of 2.5V)
VDD
2.3
2.7
Supply voltage (VDD of 2.6V for DDR400 device)
VDD
2.5
2.7
I/O Supply voltage
VDDQ
2.3
2.7
V
I/O Supply voltage for DDR400 device
VDDQ
2.5
2.7
V
I/O Reference voltage
VREF
0.49*VDDQ
0.51*VDDQ
V
1
I/O Termination voltage(system)
VTT
VREF-0.04
VREF+0.04
V
2
Input logic high voltage
VIH(DC)
VREF+0.15
VDDQ+0.3
V
Input logic low voltage
VIL(DC)
-0.3
VREF-0.15
V
Input Voltage Level, CK and CK inputs
VIN(DC)
-0.3
VDDQ+0.3
V
Input Differential Voltage, CK and CK inputs
VID(DC)
0.3
VDDQ+0.6
V
3
Input leakage current
II
-2
2
uA
Output leakage current
IOZ
-5
5
uA
Output High Current (VOUT = 1.95V)
IOH
-16.8
mA
Output Low Current (VOUT = 0.35V)
IOL
16.8
mA
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