參數(shù)資料
型號： V55C3256164VBLG8
廠商： PROMOS TECHNOLOGIES INC
元件分類： DRAM
英文描述： SYNCHRONOUS DRAM, PBGA54
封裝： ROHS COMPLIANT, MO-210, FBGA-54
文件頁數(shù)： 3/46頁
文件大?。?/td> 575K
代理商： V55C3256164VBLG8
ProMOS TECHNOLOGIES
V55C3256164VB
11
V55C3256164VB Rev. 1.0 March 2008
with Auto-Precharge function is initiated. The
SDRAM automatically enters the precharge opera-
tion a time delay equal to tWR (Write recovery time)
after the last data in.
Precharge Command
There is also a separate precharge command
available. When RAS and WE are low and CAS is
high at a clock timing, it triggers the precharge
operation. Three address bits, BA0, BA1 and A10
are used to define banks as shown in the following
list. The precharge command can be imposed one
clock before the last data out for CAS latency = 2,
two clocks before the last data out for CAS latency
= 3. Writes require a time delay twr from the last
data out to apply the precharge command.
Bank Selection by Address Bits:
Burst Termination
Once a burst read or write operation has been ini-
tiated, there are several methods in which to termi-
nate the burst operation prematurely. These
methods include using another Read or Write Com-
mand to interrupt an existing burst operation, use a
Precharge Command to interrupt a burst cycle and
close the active bank, or using the Burst Stop Com-
mand to terminate the existing burst operation but
leave the bank open for future Read or Write Com-
mands to the same page of the active bank. When
interrupting a burst with another Read or Write
Command care must be taken to avoid I/O conten-
tion. The Burst Stop Command, however, has the
fewest restrictions making it the easiest method to
use when terminating a burst operation before it has
been completed. If a Burst Stop command is issued
during a burst write operation, then any residual
data from the burst write cycle will be ignored. Data
that is presented on the I/O pins before the Burst
Stop Command is registered will be written to the
memory.
A10
BA0
BA1
000
Bank 0
001
Bank 1
010
Bank 2
011
Bank 3
1
X
all Banks
Recommended Operation and Characteristics
TA = 0 to 70 °C(Commercial)/-40 to 85 °C(Industrial); VSS = 0 V; VCC ,VCCQ= (3V~3.3V)+/- 0.3V
Note:
1.
All voltages are referenced to VSS.
2.
VIH may overshoot to VCC + 0.8 V for pulse width of < 4ns with 2.5V. VIL may undershoot to -0.8 V for pulse width < 4.0 ns with
2.5V. Pulse width measured at 50% points with amplitude measured peak to DC reference.
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
Input high voltage
VIH
0.8xVCCQ
Vcc+0.3
V
1, 2
Input low voltage
VIL
– 0.3
0.3
V
1, 2
Output high voltage (IOUT = – 4.0 mA)
VOH
VCCQ-0.2
–
V
Output low voltage (IOUT = 4.0 mA)
VOL
–0.4
V
Input leakage current, any input
(0 V < VIN < 3.6 V, all other inputs = 0 V)
II(L)
– 5
5
A
Output leakage current
(DQ is disabled, 0 V < VOUT < VCC)
IO(L)
– 5
5
A
Deep Power Down Mode
TheDeep Power Down mode is an unique functi
on with very low standby currents. All internal volat
ge generators inside the RAM are stopped and all
memory data is lost in this mode. To enter the Deep
Power Down mode all banks must be precharged.
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