參數(shù)資料
型號: V55C3256164VBLG8
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: SYNCHRONOUS DRAM, PBGA54
封裝: ROHS COMPLIANT, MO-210, FBGA-54
文件頁數(shù): 11/46頁
文件大?。?/td> 575K
代理商: V55C3256164VBLG8
19
V55C3256164VB Rev. 1.0 March 2008
ProMOS TECHNOLOGIES
V55C3256164VB
3. Read Interrupted by a Read
(Burst Length = 4, CAS latency = 2, 3)
4.1 Read to Write Interval
(Burst Length = 4, CAS latency = 3)
COMMAND
READ A
READ B
NOP
t
CK2, I/O’s
CAS latency = 2
t
CK3, I/O’s
CAS latency = 3
NOP
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
DOUT B0
DOUT B1
DOUT B2
DOUT B3
DOUT A0
DOUT B0
DOUT B1
DOUT B2
DOUT B3
DOUT A0
COMMAND
NOP
READ A
NOP
WRITE B
NOP
DQM
DOUT A0
DIN B0
DIN B1
DIN B2
Must be Hi-Z before
the Write Command
I/O’s
Minimum delay between the Read and Write Commands = 4+1 = 5 cycles
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
tDQZ
tDQW
: “H” or “L”
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