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參數(shù)資料
| 型號： | US6T9 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose amplification (−30V, −1A) |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 106K |
| 代理商： | US6T9 |
US6T9
Transistors
z
Packaging specifications
Rev.A
2/2
US6T9
TR
3000
Type
Package
Code
Basic ordering unit (pieces)
Taping
z
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
10
D
F
1000
100
Ta
=
100
°
C
Ta
=
40
°
C
Ta
=
25
°
C
V
CE
=
2V
Pulsed
Fig.1 DC current gain
vs. collector current
0.1
0.01
0.001
10
1
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
B
B
(
C
C
(
Ta
=
25
°
C
Ta
=
100
°
C
Ta
=
25
°
C
Ta
=
40
°
C
Ta
=
40
°
C
Ta
=
100
°
C
V
BE(sat)
V
CE(sat)
I
C
/I
B
=
20/1
Pulsed
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
0.001
0.01
C
C
(
0.1
1
10
Ta
=
25
°
C
Pulsed
I
C
/I
B
=
10/1
I
C
/I
B
=
20/1
I
C
/I
B
=
50/1
Fig.3 Collector-emitter saturation voltage
vs. collector current
0
0.5
1
1.5
BASE TO EMITTER CURRENT : V
BE
(V)
0.001
C
C
(
0.01
1
0.1
V
CE
=
2V
Pulsed
Ta
=
100
°
C
Ta
=
25
°
C
Ta
=
40
°
C
Fig.4 Grounded emitter propagation
characteristics
100
C
EMITTER TO BASE VOLTAGE : V
EB
(
V)
COLLECTOR TO BASE VOLTAGE : V
CB
(
V)
0.01
0.1
1
EMITTER CURRENT : I
E
(A)
10
T
T
(
1000
100
Ta
=
25
°
C
V
CE
=
2V
f
=
100MHz
Fig.5 Gain bandwidth product
vs. emitter current
1
0.1
1
COLLECTOR CURRENT : I
C
(A)
10
1000
100
Ta
=
25
°
C
V
CE
=
5V
I
C
/I
B
=
20/1
tstg
tdon
tr
tf
Fig.6 Switching time
S
1
10
100
1
10
f
=
1MHz
I
C
=
0A
Ta
=
25
°
C
E
Cib
Cob
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| US6T9_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose amplification (−30V, −1A) |
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