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參數(shù)資料
| 型號： | US6X8 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose amplification (30V, 1A) |
| 中文描述： | 通用放大（30V的，1A）條 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 68K |
| 代理商： | US6X8 |
US6X8
Transistors
General purpose amplification (30V, 1A)
Rev.B
1/2
US6X8
z
Application
Low frequency amplifier
z
Features
1) Collector current is large.
2) Collector saturation voltage is low.
V
CE
(sat) : max. 350mV
at Ic= 500mA / I
B
= 25mA
z
External dimensions
(Unit : mm)
ROHM : TUMT6 Abbreviated symbol : X08
0
0
0
0.15Max.
2
1
0
(2)
(5)
(1)
(3)
(6)
(4)
1.7
2.1
0.2
1pin mark
0.2
0
0
z
Absolute maximum ratings
(Ta=25
°
C)
z
Equivalent Circuit
(4)
(5)
(6)
Tr1
Tr2
(1)
(2)
(3)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
1
2
×
25mm
×
t
0.8mm ceramic substrate
3
z
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Unit
V
V
V
A
A
1
2
3
3
P
C
W/TOTAL
W/TOTAL
W/ELEMENT
Tj
°
C
°
C
Tstg
Limits
30
30
6
1
2
0.4
1.0
0.7
150
55 to
+
150
W
=1ms
Single pulse, P
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
30
30
6
270
Typ. Max.
120
320
7
Unit
V
V
V
nA
nA
mV
MHz V
CE
=
2V, I
E
=
100mA, f
=
100MHz
pF
V
CB
=
10V, I
E
=
0A, f
=
1MHz
Conditions
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
30V
V
EB
=
6V
I
C
/I
B
=
500mA/25mA
V
CE
/I
C
=
2V/100mA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
100
100
350
680
Pulsed
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