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參數(shù)資料
| 型號： | US6T9 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose amplification (−30V, −1A) |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 106K |
| 代理商： | US6T9 |
US6T9
Transistors
General purpose amplification (
30V,
1A)
Rev.A
1/2
US6T9
z
Application
Low frequency amplifier
Driver
z
Features
1) Collector current is large.
2) Collector saturation voltage is low.
V
CE(sat)
≤
350mV
At I
C
=
500mA / I
B
=
25mA
z
Absolute maximum ratings
(Ta=25
°
C)
z
External dimensions
(Unit : mm)
0
0
0
0.15Max.
2
1
0
(2)
(5)
(1)
(3)
(6)
(4)
1.7
2.1
0.2
1pin mark
0.2
0
0
ROHM : TUMT6 Abbreviated symbol : T09
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
30
30
6
1
2
400
1.0
0.7
150
55 to
+
150
1
Unit
V
V
V
A
A
mW/TOTAL
W/TOTAL
WELEMENT
3
°
C
°
C
2
3
1
2
3
z
Electrical characteristics
(Ta=25
°
C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Single pulse, P
W
=
1ms
Each Terminal Mounted on a Recommended
Mounted on a 25mm
×
25mm
×
0.8mm Ceramic substrate
z
Equivalent circuit
(4)
(5)
(6)
(1)
(2)
(3)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
Min.
30
30
6
270
Typ.
150
Max.
100
100
350
680
Unit
V
V
V
nA
nA
mV
Conditions
V
CB
=
10V, I
E
=
0A, f
=
1MHz
f
T
320
7
MHz
pF
V
CE
=
2V, I
E
=
100mA, f
=
100MHz
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
30V
V
EB
=
6V
I
C
=
500mA, I
B
=
25mA
V
CE
=
2V, I
C
=
100mA
Cob
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Pulsed
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