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參數(shù)資料
| 型號： | US5L12 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose transistor (isolated transistor and diode) |
| 中文描述： | 通用晶體管（孤立的晶體管和二極管） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 80K |
| 代理商： | US5L12 |
US5L12
Transistors
z
Electrical characteristic curves
Tr1
B
B
(
Rev.A
3/4
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
10
D
F
100
1000
Ta=25C
Ta=40C
Ta=100C
V
CE
=2V
Pulsed
Fig.1 DC current gain
vs. collector current
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
C
C
(
0.1
0.01
10
1
Ta=25C
Ta=100C
Ta=25C
Ta=40C
Ta=40C
Ta=100C
V
BE(sat)
V
CE(sat)
I
/I
B
Pulsed
C
/I
B
=20/1
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
0.001
C
C
(
0.01
0.1
10
1
Ta=25C
V
CE
=2V
I
C
/I
B
=50/1
I
C
/I
B
=20/1
I
C
/I
B
=10/1
Fig.3 Collector-emitter saturation voltage
vs. collector current
0
0.001
0.01
0.1
1
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.4 Grounded emitter propagation
characteristics
C
C
(
1.5
1.0
0.5
V
CE
=2V
Pulsed
Ta=25C
Ta=
40 C
Ta=100C
0.01
0.1
1
EMITTER CURRENT : I
E
(A)
Fig.5 Gain bandwidth product
vs. emitter current
10
T
T
100
1000
V
CE
=2V
Ta=25C
f=100MHz
1
0.1
1
COLLECTOR CURRENT : I
C
(A)
Fig.6 Switching time
S
10
100
Ta=25C
V
CE
=5V
I
C
/I
B
=20/1
tstg
tdon
tr
tf
1000
0.01
0.1
1
10
100
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
1
E
C
10
100
Cib
Cob
I =0A
f
1MHz
Ta==
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
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