參數(shù)資料
型號: UPD44325084F5-E50-EQ2-A
元件分類: SRAM
英文描述: 4M X 8 QDR SRAM, 0.45 ns, PBGA165
封裝: 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165
文件頁數(shù): 7/40頁
文件大?。?/td> 387K
代理商: UPD44325084F5-E50-EQ2-A
15
Data Sheet
M16784EJ4V0DS
μPD44325084, 44325094, 44325184, 44325364
Byte Write Operation
[
μPD44325084]
Operation
K
K#
NW0#
NW1#
Write D0 to D7
L
→ H
0
L
→ H
0
Write D0 to D3
L
→ H
0
1
L
→ H
0
1
Write D4 to D7
L
→ H
1
0
L
→ H
1
0
Write nothing
L
→ H
1
L
→ H
1
Remarks 1. H : HIGH, L : LOW,
→ : rising edge.
2. Assumes a WRITE cycle was initiated. NW0# and NW1# can be altered for any portion of the BURST
WRITE operation provided that the setup and hold requirements are satisfied.
[
μPD44325094]
Operation
K
K#
BW0#
Write D0 to D8
L
→ H
0
L
→ H
0
Write nothing
L
→ H
1
L
→ H
1
Remarks 1. H : HIGH, L : LOW,
→ : rising edge.
2. Assumes a WRITE cycle was initiated. BW0# can be altered for any portion of the BURST WRITE
operation provided that the setup and hold requirements are satisfied.
[
μPD44325184]
Operation
K
K#
BW0#
BW1#
Write D0 to D17
L
→ H
0
L
→ H
0
Write D0 to D8
L
→ H
0
1
L
→ H
0
1
Write D9 to D17
L
→ H
1
0
L
→ H
1
0
Write nothing
L
→ H
1
L
→ H
1
Remarks 1. H : HIGH, L : LOW,
→ : rising edge.
2. Assumes a WRITE cycle was initiated. BW0# and BW1# can be altered for any portion of the BURST
WRITE operation provided that the setup and hold requirements are satisfied.
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