參數(shù)資料
型號(hào): UPD4416001
廠商: NEC Corp.
英文描述: 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT
中文描述: 1,600位CMOS快速靜態(tài)存儲(chǔ)器1,600 - Word的1位
文件頁數(shù): 1/12頁
文件大?。?/td> 83K
代理商: UPD4416001
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1999
MOS INTEGRATED CIRCUIT
μ
PD4416001
16M-BIT CMOS FAST SRAM
16M-WORD BY 1-BIT
DATA SHEET
Document No. M14077EJ3V0DS00 (3rd edition)
Date Published December 2000 NS CP(K)
Printed in Japan
The mark
shows major revised points.
Description
The
μ
PD4416001 is a high speed, low power, 16,777,216 bits (16,777,216 words by 1 bits) CMOS static RAM.
Operating supply voltage is 3.3 V
±
0.3 V.
The
μ
PD4416001 is packaged in a 54-PIN PLASTIC TSOP (II).
Features
16,777,216 words by 1 bits
Fast access time : 15, 17 ns (MAX.)
Output Enable input for easy application
Ordering Information
Part number
Package
Supply voltage
Access time
Supply current mA (MAX.)
V
ns (MAX.)
At operating
At standby
μ
PD4416001G5-A15-9JF
54-PIN PLASTIC TSOP (II)
3.3
±
0.3
15
165
10
μ
PD4416001G5-A17-9JF
(10.16 mm (400))
17
160
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