參數(shù)資料
型號: UPA2711GR
廠商: NEC Corp.
英文描述: SWITCHING P-CHANNEL POWER MOSFET
中文描述: 開關(guān)的P -溝道功率MOSFET
文件頁數(shù): 5/7頁
文件大?。?/td> 149K
代理商: UPA2711GR
Data Sheet G15979EJ1V0DS
5
μ
PA2711GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
D
0
5
10
15
20
25
30
-50
0
50
100
150
V
GS
=
4.0 V
4.5 V
10 V
Pulsed
I
D
=
6.5 A
T
ch
- Channel Temperature - °C
SWITCHING CHARACTERISTICS
C
i
,
o
,
r
10
100
1000
10000
-0.01
-0.1
-1
-10
-100
V
GS
= 0 V
f = 1 MHz
C
rss
C
iss
C
oss
V
DS
- Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d
,
r
,
d
,
f
1
10
100
1000
-0.1
-1
-10
-100
V
DD
=
15 V
V
GS
=
10 V
R
G
= 10
t
d(off)
t
f
t
r
t
d(on)
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
D
0
-10
-20
-30
0
10
20
30
40
50
60
0
-5
-10
-15
V
DS
V
GS
V
DD
=
24 V
15 V
6 V
I
D
=
13 A
Q
G
- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
V
G
I
F
0.01
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
Pulsed
V
GS
=
10 V
0 V
V
F(S-D)
- Source to Drain Voltage - V
t
r
1
10
100
1000
0.1
1
10
100
di/dt = 50 A/
μ
s
V
GS
= 0 V
I
F
- Diode Forward Current - A
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