參數(shù)資料
型號(hào): UPA2711GR
廠商: NEC Corp.
英文描述: SWITCHING P-CHANNEL POWER MOSFET
中文描述: 開(kāi)關(guān)的P -溝道功率MOSFET
文件頁(yè)數(shù): 4/7頁(yè)
文件大小: 149K
代理商: UPA2711GR
Data Sheet G15979EJ1V0DS
4
μ
PA2711GR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
-10
-20
-30
-40
-50
-60
0
-0.4
-0.8
-1.2
V
GS
=
10 V
Pulsed
4.5 V
4.0 V
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
I
D
-0.01
-0.1
-1
-10
-100
-1000
0
-1
-2
-3
-4
-5
Pulsed
V
DS
=
10 V
T
ch
=
55°C
25°C
75°C
150°C
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
0
-0.5
-1
-1.5
-2
-2.5
-3
-50
0
50
100
150
-
Pulsed
V
DS
=
10 V
T
ch
- Channel Temperature -
°
C
|
f
0.1
1
10
100
-0.1
-1
-10
-100
Pulsed
V
DS
=
10 V
T
ch
=
55°C
25°C
75°C
150°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
0
5
10
15
20
25
30
-0.1
-1
-10
-100
V
GS
=
4.0 V
4.5 V
10 V
Pulsed
I
D
- Drain Current - A
R
D
0
10
20
30
40
0
-5
-10
-15
-20
Pulsed
I
D
=
6.5 A
V
GS
- Gate to Source Voltage - V
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