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參數(shù)資料
| 型號： | UPA2713GR |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)的P -溝道功率MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 77K |
| 代理商： | UPA2713GR |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA2713GR
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No. G15981EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan
2002
DESCRIPTION
The
μ
PA2713GR is P-channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
FEATURES
Low on-state resistance
R
DS(on)1
= 16 m
MAX. (V
GS
=
10 V, I
D
=
4.0 A)
R
DS(on)2
= 25 m
MAX. (V
GS
=
4.5 V, I
D
=
4.0 A)
R
DS(on)3
= 30 m
MAX. (V
GS
=
4.0 V, I
D
=
4.0 A)
Low C
iss
: C
iss
= 1600 pF TYP.
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA2713GR
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
Total Power Dissipation
Note3
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
30
m
20
m
8
m
32
2
2
150
V
V
A
A
W
W
°C
°C
A
mJ
Channel Temperature
Storage Temperature
Single Avalanche Current
Note4
Single Avalanche Energy
Note4
55 to +150
8
6.4
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
3.
Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
4.
Starting T
ch
= 25°C, V
DD
=
15 V, R
G
= 25
, L = 100
μ
H, V
GS
=
20
→
0 V
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
PACKAGE DRAWING (Unit: mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 MAX.
0.10
1
4
8
5
1, 2, 3
4
5, 6, 7, 8: Drain
: Source
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
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| UPA2713GR-E1-A | 制造商:Renesas Electronics 功能描述:Pch -30V -8A 16m@10V 8SOP Cut Tape |
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| UPA2714GR | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOSFET |
| UPA2715GR-E1-AT | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 18A 8-Pin Power SOP T/R |
| UPA2716AGR-E1-AT | 功能描述:MOSFET LV 8SOP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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