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參數(shù)資料
| 型號： | UPA2450BTL |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 140K |
| 代理商： | UPA2450BTL |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA2450B
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16635EJ1V0DS00 (1st edition)
Date Published January 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The
μ
PA2450B is a switching device, which can be driven
directly by a 2.5 V power source.
The
μ
PA2450B features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and
so on.
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 17.5 m
MAX. (V
GS
= 4.5 V, I
D
= 4.0 A)
R
DS(on)2
= 18.5 m
MAX. (V
GS
= 4.0 V, I
D
= 4.0 A)
R
DS(on)3
= 22.0 m
MAX. (V
GS
= 3.1 V, I
D
= 4.0 A)
R
DS(on)4
= 27.5 m
MAX. (V
GS
= 2.5 V, I
D
= 4.0 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA2450BTL
6PIN HWSON (4521)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Drain Current (pulse)
Note2
Total Power Dissipation (2 units)
Note1
Total Power Dissipation (2 units)
Note3
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20.0
±
12.0
±
8.6
±
80.0
2.5
0.7
150
V
V
A
A
W
W
°
C
°
C
55 to +150
Notes 1.
Mounted on ceramic board of 50 cm
2
x 1.1 mm
2.
PW
≤
10
μ
s, Duty Cycle
≤
1%
3.
Mounted on FR-4 board of 50 cm
2
x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1
2
3
6
5
4
4.4±0.1
5.0±0.1
0
0
0
+
-
0
0
0
+
-
7
(0.9)
(0.15)
(
(2.2)
(0.5)
1
2
1,2:
3:
7:
Each lead has same dimensions.
Source 1
Gate 1
Drain
5,6:
4:
Source 2
Gate 2
EQUIVALENT CIRCUIT
Source2
Body
Diode
Gate
Protection
Diode
Gate2
Drain2
Source1
Body
Diode
Gate
Protection
Diode
Gate1
Drain1
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| UPA2450C | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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| UPA2450TL | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2450TL-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
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