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參數(shù)資料
| 型號： | UPA2701GR |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)N溝道功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 71K |
| 代理商： | UPA2701GR |
2002
MOS FIELD EFFECT TRANSISTOR
μ
PA2701GR
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.G15714EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark
!
shows major revised points.
DESCRIPTION
The
μ
PA2701GR is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
applications of notebook computers.
FEATURES
Low on-state resistance
R
DS(on)1
= 7.5 m
MAX. (V
GS
= 10 V, I
D
= 7.0 A)
R
DS(on)2
= 11.6 m
MAX. (V
GS
= 4.5 V, I
D
= 7.0 A)
Low C
iss
: C
iss
= 1200 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA2701GR
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
20
V
Drain Current (DC)
Drain Current (pulse)
Note1
I
D(DC)
±
14
A
I
D(pulse)
±
56
A
Total Power Dissipation (T
A
= 25°C)
Note2
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note3
T
stg
–55 to +150
°C
I
AS
14
A
Single Avalanche Energy
Note3
E
AS
19.6
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
, L = 100
μ
H, V
GS
= 20
→
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is extemally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 MAX.
0.10
1
4
8
5
1, 2, 3
4
5, 6, 7, 8 ; Drain
; Source
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
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| UPA2701TP | WASHER FLAT NUB4 NYLON |
| UPA2702GR | NUT, HEX, 2-56 X STD THK, SST |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA2701GR-E1-A | 制造商:Renesas Electronics 功能描述:Nch 30V 14A 7.5m@10V 8SOP Cut Tape |
| UPA2701TP | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| UPA2701TP-E1-AZ | 制造商:Renesas Electronics 功能描述:Nch 30V 35A 7.5m@10V 8HSOP Cut Tape |
| UPA2702 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UPA2702TP Data Sheet | Data Sheet[05/2002] |
| UPA2702GR | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
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