參數(shù)資料
型號(hào): UPA1951TE
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān)
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 73K
代理商: UPA1951TE
Data Sheet G15613EJ1V0DS
5
μ
PA1951
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
D
0
- 0.01
50
100
150
200
- 0.1
- 1
- 10
V
GS
=
4.5 V
Pulsed
T
A
= 125°C
75°C
25°C
25°C
I
D
- Drain Current - A
R
D
0
- 0.01
50
100
150
200
- 0.1
- 1
- 10
V
GS
=
4.0 V
Pulsed
T
A
= 125°C
75°C
25°C
25°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
D
0
- 0.01
50
100
150
200
- 0.1
- 1
- 10
V
GS
=
2.5 V
Pulsed
25°C
25°C
T
A
= 125°C
75°C
I
D
- Drain Current - A
R
D
50
100
150
200
250
- 0.01
- 0.1
- 1
- 10
V
GS
=
1.8 V
Pulsed
25°C
25°C
T
A
= 125°C
75°C
I
D
- Drain Current - A
SWITCHING CHARACTERISTICS
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
t
d
,
r
,
d
,
f
1
10
100
1000
- 0.1
- 1
- 10
V
DD
=
6.0 V
V
GS
=
4.0 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
I
D
- Drain Current - A
C
i
,
o
,
r
10
100
1000
- 0.1
- 1
- 10
- 100
V
GS
= 0 V
f = 1.0 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
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