參數(shù)資料
型號: UPA1915
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: P溝道MOS場效應(yīng)晶體管開關(guān)
文件頁數(shù): 5/8頁
文件大小: 66K
代理商: UPA1915
Data Sheet G14761EJ1V0DS00
5
μ
PA1915
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
i
,
o
,
r
10
0.1
100
1000
10000
1
10
100
f = 1
MHz
V
GS
= 0V
C
iss
C
rss
C
oss
0.1
1.0
10
I
D
- Drain Current - A
t
d
,
r
,
d
,
f
100
1000
10
1
t
d(off)
t
d(on)
t
f
t
r
SWITCHING CHARACTERISTICS
V
DD
=
10 V
V
GS(on)
=
4.0 V
R
G
0.01
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
V
F(S-D)
- Diode Forward Voltage - V
V
GS
= 0V
Q
G
- Gate Charge - nC
0 1 2 3 4 5 6 7
DYNAMIC INPUT CHARACTERISTICS
V
G
-
5
4
3
2
1
0
V
DD
=
16 V
10 V
I
D
=
4.5 A
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
t
10
0.1
1
100
1000
1
0.001
0.01
0.1
10
100
1000
Mounted on 250 mm x 35
μ
m
Copper Pad
Connected to Drain Electrode
in 50 mm x 50 mm x 1.6 mm
FR-4 Board Single Pulse
Without Board
相關(guān)PDF資料
PDF描述
UPA1915TE P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1916 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1916TE P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA2001C NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY
UPA2002C NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPA1915TE 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1915TE-T2-A 制造商:Renesas Electronics Corporation 功能描述:
UPA1916 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1916TE 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1917 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING