參數(shù)資料
型號: UPA1915
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: P溝道MOS場效應(yīng)晶體管開關(guān)
文件頁數(shù): 2/8頁
文件大?。?/td> 66K
代理商: UPA1915
Data Sheet G14761EJ1V0DS00
2
μ
PA1915
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –20 V, V
GS
= 0 V
–10
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±12 V, V
DS
= 0 V
±
10
μ
A
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= –10 V, I
D
= –1
mA
–0.5
–1.1
–1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= –10 V, I
D
= –2.5 A
3
8.8
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= –4.5 V, I
D
= –2.5 A
45
55
m
R
DS(on)2
V
GS
= –4.0 V, I
D
= –2.5 A
47
58
m
R
DS(on)3
V
GS
= –2.7 V, I
D
= –2.5 A
61
82
m
R
DS(on)4
V
GS
= –2.5 V, I
D
= –2.5 A
67
90
m
Input Capacitance
C
iss
V
DS
= –10 V
820
pF
Output Capacitance
C
oss
V
GS
= 0 V
210
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
100
pF
Turn-on Delay Time
t
d(on)
V
DD
= –10 V
16
ns
Rise Time
t
r
I
D
= –2.5 A
14
ns
Turn-off Delay Time
t
d(off)
V
GS(on)
= –4.0 V
58
ns
Fall Time
t
f
R
G
= 10
46
ns
Total Gate Charge
Q
G
V
DD
= –16 V
5.0
nC
Gate to Source Charge
Q
GS
I
D
= –4.5 A
2.0
nC
Gate to Drain Charge
Q
GD
V
GS
= –4.0 V
2.5
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 4.5 A, V
GS
= 0 V
0.86
V
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
(
)
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
1 %
τ
PG.
50
D.U.T.
R
L
V
DD
I
G
=
2 mA
GS
Wave Form
DS
Wave Form
V
GS
(
)
V
DS
(
)
10
%
0
0
90
%
90
%
90
%
V
GS(on)
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10
% 10
%
#
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