參數(shù)資料
型號(hào): UPA1915
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: P溝道MOS場(chǎng)效應(yīng)晶體管開關(guān)
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 66K
代理商: UPA1915
Data Sheet G14761EJ1V0DS00
4
μ
PA1915
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
T
A
= 125
C
75
C
25
C
25
C
100
80
60
40
20
0
V
GS
=
4.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
T
A
= 125
C
75
C
25
C
25
C
100
80
60
40
20
0
V
GS
=
4.0 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
T
A
= 125
C
75
C
25
C
25
C
150
100
50
0
V
GS
=
2.7 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
T
A
= 125
C
75
C
25
C
25
C
150
100
50
0
V
GS
=
2.5 V
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -C
I
D
=
2.5 A
50
0
50
100
150
20
60
40
100
80
R
D
-
V
GS
=
2.5 V
2.7 V
4.0 V
4.5 V
0
0
40
20
60
80
100
2
V
GS
- Gate to Source Voltage - V
4
6
8
10
12
R
D
-
I
D
=
2.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
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