參數(shù)資料
型號(hào): UPA1717G
廠商: NEC Corp.
英文描述: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
中文描述: 開(kāi)關(guān)P溝道功率MOS FET工業(yè)用
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 65K
代理商: UPA1717G
Data Sheet G14047EJ1V0DS00
4
μ
PA1717
FORWARD TRANSFER CHARACTERISTICS
V
GS
-
Gate to Source Voltage - V
I
D
0.001
0.1
0.01
1
10
100
Pulsed
0
2
1
3
4
V
DS
=
10
V
25C
75C
T
A
=
150C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0
0.4
0.6
0.8
5
0.2
Pulsed
V
GS
=
10
V
25
30
20
10
15
4.5
V
1.0
1.2
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
f
|
I
D
- Drain Current - A
1
100
10
1
0.1
10
100
0.1
V
DS
=
10 V
Pulsed
T
A
=
25C
25C
75C
150
C
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
V
GS
- Gate to Source Voltage - V
R
D
5
10
15
70
60
50
40
30
20
10
0
3
A
I
D
=
6
A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
100
80
60
40
–10
–100
–0.1
0
– 1000
–1
Pulsed
V
GS
=
4.5
V
10
V
20
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
V
DS
=
10
V
I
D
=
1
mA
50
0
150
50
100
3.0
2.5
2.0
1.5
1.0
0.5
0
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