參數(shù)資料
型號: UPA1720
廠商: NEC Corp.
元件分類: 功率晶體管
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級
文件頁數(shù): 1/8頁
文件大?。?/td> 66K
代理商: UPA1720
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998, 1999
MOS FIELD EFFECT TRANSISTOR
μ
PA1720
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
G13888EJ2V0DS00 (2nd edition)
March 2000 NS CP(K)
The mark
#
shows major revised points.
DESCRIPTION
The
μ
PA1720 is N-Channel MOS Field Effect Transistor designed for DC / DC Converters and power management
application of notebook computers.
FEATURES
Low On-Resistance
R
DS(on)1
= 25.0 m
MAX. (V
GS
= 10 V, I
D
= 4.0 A)
R
DS(on)2
= 33.0 m
MAX. (V
GS
= 4.5 V, I
D
= 4.0 A)
R
DS(on)3
= 38.0 m
MAX. (V
GS
= 4.0 V, I
D
= 4.0 A)
Low C
iss
: C
iss
= 800 pF TYP.
Built-in G-S Protection Diode
Small and Surface Mount Package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1720G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0)
V
GSS
±20
V
Drain Current (DC)
I
D(DC)
±8
A
Drain Current (Pulse)
Note1
I
D(pulse)
±32
A
Total Power Dissipation (T
A
= 25 °C)
N
ote2
P
T
2.0
W
Single Avalanche Current
Note3
I
AS
8.0
A
Single Avalanche Energy
Note3
E
AS
6.4
mJ
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to + 150
°C
Notes 1.
PW
10
μ
s, Duty cycle
1 %
2.
Mounted on ceramic substrate of 1200 mm
3.
Starting T
ch
= 25 °C, R
G
= 25
,
V
GS
= 20 V
0 V
2
x 2.2 mm
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