參數(shù)資料
型號: UPA1700A
廠商: NEC Corp.
元件分類: 功率晶體管
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級
文件頁數(shù): 1/8頁
文件大小: 78K
代理商: UPA1700A
1996
DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
μ
PA1700A
PACKAGE DIMENSIONS
(in millimeter)
DESCRIPTION
This product is N-Channel MOS Field Effect
Transistor designed for DC/DC converters and power
management of notebook computers.
FEATURES
Low On-Resistance
R
DS(on)1
= 27 m
Max. (V
GS
= 10 V, I
D
= 3.5 A)
R
DS(on)2
= 50 m
Max. (V
GS
= 4 V, I
D
= 3.5 A)
Low Input Capacitance
C
iss
= 820 pF Typ.
Built-in G-S Protection Diode
Small and Surface Mount Package
(Power SOP8)
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. G12008EJ1V0DS00 (1st edition)
Date Published April 1997 N
Printed in Japan
The information in this document is subject to change without notice.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C, all terminals are connected)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note 1
Total Power Dissipation (T
A
= 25
°
C)
Note 2
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
±
20
±
7.0
±
28
2.0
150
V
V
A
A
W
C
C
–55 to +150
Notes 1.
PW
10
μ
s, Duty Cycle
1 %
2.
Mounted on ceramic substrate of 1200 mm
2
×
1.7 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device acutally used, an additional protection circuit is externally required if voltage exceeding the rated voltage may
be applied to this device.
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5 ±0.2
0
+
5.37 MAX.
0.10
1
4
8
5
1, 2, 3
4
5, 6, 7, 8
; Source
; Gate
; Drain
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