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參數(shù)資料
| 型號(hào)： | UPA1703 |
| 廠商： | NEC Corp. |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | UPA1703 |
MOS FIELD EFFECT POWER TRANSISTORS
μ
PA1703
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
1996
Document No. D11494EJ1V0DS00 (1st edition)
Date Published December 1996 N
Printed in Japan
DATA SHEET
DESCRIPTION
This product is N-Channel MOS Field Effect Transis-
tor designed for power management applications of
notebook computers.
FEATURES
Super Low On-Resistance
R
DS(on)1
= 10.5 m
R
DS(on)2
= 17 m
Low C
iss
C
iss
= 2180 pF TYP.
Built-in G-S Protection Diode
Small and Surface Mount Package
(Power SOP8)
MAX. (V
GS
= 10 V, I
D
= 5.0 A)
MAX. (V
GS
= 4 V, I
D
= 5.0 A)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C, all terminals are connected)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
A
= 25
°
C)
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
±
20
±
10
±
40
2.0
150
55 to
+150
V
V
A
A
W
°
C
°
C
Notes1
Notes2
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
Mounted on ceramic substrate of 1200 mm
2.
2
×
0.7 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device acutally used, an addtional protection circuit is externally required if voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DIMENSIONS
(in millimeter)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 MAX.
0.10
1
4
8
5
1, 2, 3
4
5, 6, 7, 8
; Source
; Gate
; Drain
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
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