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參數(shù)資料
| 型號： | UPA1705G |
| 廠商： | NEC Corp. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 59K |
| 代理商： | UPA1705G |
1998, 1999
MOS FIELD EFFECT TRANSISTOR
μ
PA1705
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
G12712EJ1V0DS00 (1st edition)
February 1999 NS CP(K)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
PACKAGE DRAWING (Unit : mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 Max.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 Max.
0.10
1
4
8
5
1, 2, 3
4
5, 6, 7, 8
; Source
; Gate
; Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for DC/DC Converters and power management
application of notebook computers.
FEATURES
Super low on-state resistance
R
DS(on)1
= 19.0 m
TYP. (V
GS
= 10 V, I
D
= 4.0 A)
R
DS(on)2
= 30.0 m
TYP. (V
GS
= 4.5 V, I
D
= 4.0 A)
Low C
iss
: C
iss
= 750 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1705G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0)
V
GSS
±25
V
Drain Current (DC)
Drain Current (Pulse)
Note1
Total Power Dissipation (T
A
= 25 °C)
Note2
I
D(DC)
±8
A
I
D(pulse)
±50
A
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to + 150
°C
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1 %
2.
Mounted on ceramic substrate of 1200 mm
2
x 1.7 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
Exceeding the rated voltage may be applied to this device.
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