參數(shù)資料
型號： TSC2008TRGVRQ1
廠商： TEXAS INSTRUMENTS INC
元件分類： 消費(fèi)家電
英文描述： SPECIALTY CONSUMER CIRCUIT, PQCC16
封裝： 4 X 4 MM, PLASTIC, VQFN-16
文件頁數(shù)： 7/35頁
文件大?。?/td> 418K
代理商： TSC2008TRGVRQ1
Converter
GND
V
DD
TEMP1
TEMP2
+IN
-IN
GND
REF
DV +
kT
q @ ln(N)
T +
q @ DV
k @ ln(N)
SBAS552
– JUNE 2011
INTERNAL TEMPERATURE SENSOR
In some applications, such as battery recharging, an ambient temperature measurement is required. The
temperature measurement technique used in the TSC2008-Q1 relies on the characteristics of a semiconductor
junction operating at a fixed current level. The forward diode voltage (VBE) has a well-defined characteristic
versus temperature. The ambient temperature can be predicted in applications by knowing the +25
°C value of
the VBE voltage and then monitoring the delta of that voltage as the temperature changes.
The TSC2008-Q1 offers two modes of temperature measurement. The first mode requires calibration at a known
temperature, but only requires a single reading to predict the ambient temperature. The TEMP1 diode, shown in
Figure 24, is used during this measurement cycle. This voltage is typically 580mV at +25
°C with a 10μA current.
The absolute value of this diode voltage can vary by a few millivolts; the temperature coefficient (TC) of this
voltage is very consistent at
–2.1mV/°C. During the final test of the end product, the diode voltage is stored at a
known room temperature, in system memory, for calibration purposes by the user. The result is an equivalent
temperature measurement resolution of 0.3
°C/LSB (1LSB = 610μV with VREF = 2.5V).
Figure 24. Functional Block Diagram of Temperature Measurement Mode
The second mode does not require a test temperature calibration, but uses a two-measurement (differential)
method to eliminate the need for absolute temperature calibration and for achieving 2
°C/LSB accuracy. This
mode requires a second conversion of the voltage across the TEMP2 diode with a resistance 91 times larger
than the TEMP1 diode. The voltage difference between the first (TEMP1) and second (TEMP2) conversion is
represented by:
(3)
Where:
N = the resistance ratio = 91.
k = Boltzmann's constant = 1.3807
× 10–23 J/K (joules/kelvins).
q = the electron charge = 1.6022
× 10–19 C (coulombs).
T = the temperature in kelvins (K).
This method can provide much improved absolute temperature measurement, but a lower resolution of
1.6
°C/LSB. The resulting equation to solve for T is:
(4)
Where:
ΔV = VBE (TEMP2) – VBE(TEMP1) (in mV).
∴ T = 2.573 ΔV (in K),
or T = 2.573
ΔV – 273 (in °C).
Temperature 1 and/or temperature 2 measurements have the same timing as shown in Figure 31 to Figure 34.
Copyright
2011, Texas Instruments Incorporated
15
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