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參數(shù)資料
| 型號(hào)： | TSC2008IRGVT |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 消費(fèi)家電 |
| 英文描述： | SPECIALTY CONSUMER CIRCUIT, PQCC16 |
| 封裝： | 4 X 4 MM, GREEN, PLASTIC, VQFN-16 |
| 文件頁數(shù)： | 6/40頁 |
| 文件大?。?/td> | 1028K |
| 代理商： | TSC2008IRGVT |
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INTERNAL TEMPERATURE SENSOR
Converter
GND
V
DD
TEMP1
TEMP2
+IN
-
IN
GND
REF
DV +
kT
q @ ln(N)
(3)
T +
q @ DV
k @ ln(N)
(4)
SBAS406B – JUNE 2008 – REVISED MARCH 2009.......................................................................................................................................................... www.ti.com
In some applications, such as battery recharging, an ambient temperature measurement is required. The
temperature measurement technique used in the TSC2008 relies on the characteristics of a semiconductor
junction operating at a fixed current level. The forward diode voltage (VBE) has a well-defined characteristic
versus temperature. The ambient temperature can be predicted in applications by knowing the +25°C value of
the VBE voltage and then monitoring the delta of that voltage as the temperature changes.
The TSC2008 offers two modes of temperature measurement. The first mode requires calibration at a known
temperature, but only requires a single reading to predict the ambient temperature. The TEMP1 diode, shown in
Figure 23, is used during this measurement cycle. This voltage is typically 580mV at +25°C with a 10
A current.
The absolute value of this diode voltage can vary by a few millivolts; the temperature coefficient (TC) of this
voltage is very consistent at –2.1mV/°C. During the final test of the end product, the diode voltage is stored at a
known room temperature, in system memory, for calibration purposes by the user. The result is an equivalent
temperature measurement resolution of 0.3°C/LSB (1LSB = 610
V with V
REF = 2.5V).
Figure 23. Functional Block Diagram of Temperature Measurement Mode
The second mode does not require a test temperature calibration, but uses a two-measurement (differential)
method to eliminate the need for absolute temperature calibration and for achieving 2°C/LSB accuracy. This
mode requires a second conversion of the voltage across the TEMP2 diode with a resistance 91 times larger
than the TEMP1 diode. The voltage difference between the first (TEMP1) and second (TEMP2) conversion is
represented by:
Where:
N = the resistance ratio = 91.
k = Boltzmann's constant = 1.3807 × 10–23 J/K (joules/kelvins).
q = the electron charge = 1.6022 × 10–19 C (coulombs).
T = the temperature in kelvins (K).
This method can provide much improved absolute temperature measurement, but a lower resolution of
1.6°C/LSB. The resulting equation to solve for T is:
Where:
ΔV = VBE (TEMP2) – VBE(TEMP1) (in mV).
∴ T = 2.573 ΔV (in K),
or T = 2.573
ΔV – 273 (in °C).
Temperature 1 and/or temperature 2 measurements have the same timing as shown in Figure 30 to Figure 33.
14
Copyright 2008–2009, Texas Instruments Incorporated
Product Folder Link(s): TSC2008
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| TSC2008IYZGR | 功能描述:觸摸屏轉(zhuǎn)換器和控制器 Nano-Pwr Touch Screen Controller RoHS:否 制造商:Microchip Technology 類型:Resistive Touch Controllers 輸入類型:3 Key 數(shù)據(jù)速率:140 SPS 分辨率:10 bit 接口類型:4-Wire, 5-Wire, 8-Wire, I2C, SPI 電源電壓:2.5 V to 5.25 V 電源電流:17 mA 工作溫度:- 40 C to + 85 C 封裝 / 箱體:SSOP-20 |
| TSC2008IYZGT | 功能描述:觸摸屏轉(zhuǎn)換器和控制器 Nano-Pwr Touch Screen Controller RoHS:否 制造商:Microchip Technology 類型:Resistive Touch Controllers 輸入類型:3 Key 數(shù)據(jù)速率:140 SPS 分辨率:10 bit 接口類型:4-Wire, 5-Wire, 8-Wire, I2C, SPI 電源電壓:2.5 V to 5.25 V 電源電流:17 mA 工作溫度:- 40 C to + 85 C 封裝 / 箱體:SSOP-20 |
| TSC2008-Q1 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1.2V to 3.6V, 12-Bit, Nanopower, 4-Wire Micro TOUCH SCREEN CONTROLLER with SPIa?￠ |
| TSC2008RGVR | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1.2V to 3.6V, 12-Bit, Nanopower, 4-Wire Micro TOUCH SCREEN CONTROLLER with SPI? |
| TSC2008RGVT | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1.2V to 3.6V, 12-Bit, Nanopower, 4-Wire Micro TOUCH SCREEN CONTROLLER with SPI⑩ |
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