參數(shù)資料
型號: TS83102G0BVGL
廠商: E2V TECHNOLOGIES PLC
元件分類: ADC
英文描述: 1-CH 10-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, CBGA152
封裝: 21 X 21 MM, 1.27 MM PITCH, CERAMIC, BGA-152
文件頁數(shù): 9/60頁
文件大?。?/td> 1510K
代理商: TS83102G0BVGL
17
0830E–BDC–06/07
e2v semiconductors SAS 2007
TS83102G0B
9.
Thermal and Moisture Characteristics
9.1
Dissipation by Conduction and Convection
The thermal resistance from junction to ambient RTH
JA is around 30°C/W. Therefore, to lower RTHJA, it
is mandatory to use an external heat sink to improve dissipation by convection and conduction. The heat
sink should be fixed in contact with the top side of the package (CuW heat spreader over Al2O3) which is
at -5V.
The heat sink needs to be electrically isolated, using adequate low RTH electrical isolation.
Example:
The thermal resistance from case to ambient RTH
CA is typically 4.0°C/W (0 m/s air flow or still air)
with the heat sink depicted in Figure 9-1 on page 18, of dimensions 50 mm x 50 mm x 22 mm
(respectively L x l x H).
The global junction to ambient thermal resistance RTH
JA is:
4.35
°C/W RTH
JC + 2.0°C/W thermal grease resistance + 4.0°C/W RTHCA (case to ambient) =
10.35
°C/W total (RTH
JA).
Assuming:
A typical thermal resistance from the junction to the bottom of the case RTH
JC of 4.35°C/W (finite
element method thermal simulation results): this value does not include the thermal contact resis-
tance between the package and the external heat sink (glue, paste, or thermal foil interface, for
example). As an example, use a 2.0
°C/W value for a
50 m thickness of thermal grease.
Note:
Example of the calculation of the ambient temperature T
A max to ensure TJ max = 110°C:
assuming RTH
JA = 10.35°C/W and power dissipation = 4.6 W, TA max = TJ - (RTHJA x 4.6 W) = 110 -
(10.35 x 4.6) = 62.39
°C. T
A max can be increased by lowering RTHJA with an adequate air flow ( 2 m/s, for
example).
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