參數(shù)資料
型號(hào)： TPCS8204
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
中文描述： 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山型（U型MOSIII）
文件頁數(shù)： 2/7頁
文件大?。?/td> 304K
代理商： TPCS8204
TPCS8204
2002-02-14
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 3a)
R
th (ch-a) (1)
114
Thermal resistance, channel to ambient
(t
=
10 s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
167
°C/W
Single-device operation
(Note 3a)
R
th (ch-a) (1)
208
Thermal resistance, channel to ambient
(t
=
10 s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
357
°C/W
Marking
(Note 6)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
(a)
(b)
Note 3:
a)
The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is only applied to one device.)
b)
The power dissipation and thermal resistance values are shown for a single device.
(During dual operation, power is evenly applied to both devices.)
Note 4: V
DD
=
16 V, T
ch
=
25°C (initial), L
=
1.0 mH, R
G
=
25
, I
AR
=
6 A
Note 5: Repetitive rating; pulse width limited by maximum channel temperature
Note 6:
on lower left of the marking indicates Pin 1.
*
shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
Type
S8204
FR-4
25.4
×
25.4
×
0.8
(unit: mm)
FR-4
25.4
×
25.4
×
0.8
(unit: mm)
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