參數(shù)資料
型號(hào): TPD1032F
廠商: Toshiba Corporation
英文描述: Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
中文描述: 東芝智能功率器件硅單片功率MOS集成電路
文件頁(yè)數(shù): 1/5頁(yè)
文件大小: 112K
代理商: TPD1032F
TPD1032F
2000-03-07 1/5
Preliminary
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
T P D 1 0 3 2 F
2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drivers
TPD1032F is a 2-IN-1 low-side switch.
The IC has a vertical MOSFET output which can be directly
driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC
offers intelligent self-protection functions.
Features
Built-in two power IC chips with a new structure combining a
control block and a vertical power MOSFET (L
2
-
π
-MOS) on
each chip.
Can directly drive a power load from a CMOS or TTL logic.
Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and
overcurrent (current limiter).
Low Drain-Source ON-resistance: R
DS (ON)
=
0.4
(max) (@V
IN
=
5 V, I
D
=
1 A, T
ch
=
25°C)
Low Leakage Current: I
DSS
=
10
μ
A (max) (@V
IN
=
0 V, V
DS
=
30 V, T
ch
=
25°C)
Low Input Current: I
IN
=
300
μ
A (max) (@V
IN
=
5 V, T
ch
=
25°C)
8-pin SOP package for surface with embossed-tape packing.
Pin Assignment
(top view)
Note1: That because of its MOS structure, this product is sensitive to static electricity.
Weight: 0.08 g (typ.)
TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of
the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure
of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please
ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
980910EBA1
SOURCE1
IN1
SOURCE2
1
2
3
8
6
7
DRAIN1
DRAIN1
DRAIN2
IN2 4
5 DRAIN2
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