參數(shù)資料
型號(hào): TPCS8104
廠(chǎng)商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
中文描述: 東芝場(chǎng)效應(yīng)晶體管硅P通道馬鞍山類(lèi)型
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 378K
代理商: TPCS8104
TPCS8104
2002-04-05
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPCS8104
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 8.1 m
(typ.)
High forward transfer admittance: |Y
fs
| = 23 S (typ.)
Low leakage current: I
DSS
=
10 μA (max) (V
DS
=
30 V)
Enhancement-mode: V
th
=
0.8 to
2.0 V (V
DS
=
10 V, I
D
=
1 mA)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
30
V
Gate-source voltage
V
GSS
±
20
V
DC
(Note 1)
I
D
11
Drain current
Pulse (Note 1)
I
DP
44
A
Drain power dissipation (t
=
10 s)
(Note 2a)
P
D
1.1
W
Drain power dissipation (t
=
10 s)
(Note 2b)
P
D
0.6
W
Single pulse avalanche energy
(Note 3)
E
AS
31.5
mJ
Avalanche current
I
AR
11
A
Repetitive avalanche energy
(Note 2a) (Note 4)
E
AR
0.11
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3R1B
Weight: 0.035 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
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