參數(shù)資料
型號(hào)： TPCP8402
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
中文描述： 東芝場(chǎng)效應(yīng)晶體管硅P，?頻道馬鞍山型（U型馬鞍山四/ U型馬鞍山三）
文件頁(yè)數(shù)： 4/6頁(yè)
文件大?。?/td> 162K
代理商： TPCP8402
TPCP8402
2003-09-26
4
N-ch
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±16 V, V
DS
= 0 V
±10
μA
Drain cut-off current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
μA
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
30
Drain-source breakdown
voltage
V
(BR) DSX
I
D
= 10 mA, V
GS
=
20 V
15
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
1.3
2.5
V
V
GS
= 4.5 V, I
D
= 2.1 A
58
77
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 2.1 A
38
50
m
Forward transfer admittance
|Y
fs
|
V
DS
= 10 V, I
D
= 2.1 A
3.5
7.0
S
Input capacitance
C
iss
470
Reverse transfer capacitance
C
rss
60
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
80
pF
Rise time
t
r
5.2
Turn-on time
t
on
8.3
Fall time
t
f
4.0
Switching time
Turn-off time
t
off
Duty
<
1%, t
w
=
10
μ
s
22
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
10
Gate
source charge 1
Q
gs1
1.7
Gate
drain (“miller”) charge
Q
gd
V
DD
≈
24 V, V
GS
= 10 V, I
D
= 6 A
2.4
nC
Source
Drain Ratings and Characteristics
(Ta =
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
16.8
A
Forward voltage (diode)
V
DSF
I
DR
= 4.2 A, V
GS
= 0 V
1.2
V
R
L
=
V
DD
～
15 V
0 V
V
GS
10 V
4
I
D
=
2.1 A
V
OUT
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參數(shù)描述
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TPCP8402_07 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
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