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參數(shù)資料
| 型號： | TPCP8402 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) |
| 中文描述： | 東芝場效應晶體管硅P，?頻道馬鞍山型（U型馬鞍山四/ U型馬鞍山三） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 162K |
| 代理商： | TPCP8402 |
TPCP8402
2003-09-26
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 3a)
R
th (ch-a) (1)
84.5
Thermal resistance,
channel to ambient
(t
=
5 s)
(Note 2a) Single-device value at
dual operation (Note 3b)
R
th (ch-a) (2)
101.6
°C/W
Single-device operation
(Note 3a)
R
th (ch-a) (1)
215.5
Thermal resistance,
channel to ambient
(t
=
5 s)
(Note 2b) Single-device value at
dual operation (Note 3b)
R
th (ch-a) (2)
347.2
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: P Channel: V
DD
=
24 V, T
ch
=
25°C (initial), L
=
0.2 mH, R
G
=
25
, I
AR
=
1.7 A
N Channel: V
DD
=
24 V, T
ch
=
25°C (initial), L
=
0.5 mH, R
G
=
25
, I
AR
=
2.1 A
Note 5: Repetitive rating; Pulse width limited by maximum channel temperature.
Note 6: Black round marking “
” locates on the left lower side of parts number marking “8402” indicates terminal
No. 1.
“ ” shows lot number, which is a three digit number. The first digit number expresses the year of
manufacture: last decimel digit of the year of manufacture, the next two digit number expresses the week of
manufacture.
FR-4
25.4
×
25.4
×
0.8
(Unit: mm)
(b)
FR-4
25.4
×
25.4
×
0.8
(Unit: mm)
(a)
25.4
2
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| TPCP8404 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO/U-MOS) |
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