參數(shù)資料
型號： TPCA8102
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
中文描述： 東芝場效應(yīng)晶體管硅P通道馬鞍山型（U型MOSIII）
文件頁數(shù)： 1/4頁
文件大?。?/td> 182K
代理商： TPCA8102
TPCA8102
2003-08-29
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS
Ⅲ
)
TPCA8102
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 4.5m
(typ.)
High forward transfer admittance: |Y
fs
| = 60S (typ.)
Low leakage current: I
DSS
=
10 μA (max) (V
DS
=
30 V)
Enhancement mode: V
th
=
0.8 to
2.0 V (V
DS
=
10 V, I
D
=
1 mA)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
30
V
Gate-source voltage
V
GSS
±
20
V
DC
(Note 1)
I
D
40
Drain current
Pulsed (Note 1)
I
DP
120
A
Drain power dissipation
(Tc=25
℃
)
P
D
45
W
Drain power dissipation
(t
=
10 s)
(Note 2a)
P
D
2.8
W
Drain power dissipation
(t
=
10 s)
(Note 2b)
P
D
1.6
W
Single pulse avalanche energy
(Note 3)
E
AS
208
mJ
Avalanche current
I
AR
40
A
Repetitive avalanche energy
(Tc=25
℃
) (Note 4)
E
AR
4.5
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
5.0±0.2
0
0
S
0.05 S
A
0
6
1.27
0.4±0.1
5
0.595
0.05 M A
1
4
5
8
0.15±0.05
0.8±0.1
1
4.25±0.2
0
3
1
4
5
8
1,2,3
：
SOURCE
4
：
GATE
5,6,7,8
：
DRAIN
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.076 g (typ.)
Circuit Configuration
8
6
1
2
3
7
5
4
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