參數(shù)資料
型號: TPCF8104
廠商: Toshiba Corporation
英文描述: TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(U?MOS?)
中文描述: 東芝場效應晶體管硅P通道馬鞍山型(ü?馬鞍山?)
文件頁數(shù): 1/3頁
文件大小: 75K
代理商: TPCF8104
TOSHIBA
0
0
1
0
0
0.05
2.9
0.2
2
0.3
0.1
0.95
0
0
0.25 -0.15
+0.25
1
4
3
+
+
0.95
1
2
3
4
DRAIN
DRAIN
DRAIN
GATE
5
SOURCE
DRAIN
DRAIN
DRAIN
6
7
8
2.9
0.1
0.3
+0.1
0 05
8
1
0
1
0
0.65
0.8
0.05
1
4
5
0
0
0
0.475
0.025 M A
A
0
S
0.05
S
0
0
0
Circuit
Configuration
1
2
3
4
8
7
6
5
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相關代理商/技術參數(shù)
參數(shù)描述
TPCF8104(TE85L) 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 30V 6A 6PIN VS - Tape and Reel 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 30V 6A VS-8
TPCF8104(TE85L,F) 功能描述:MOSFET PW TR P-Ch -30V -6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TPCF8104(TE85L,F,M 功能描述:MOSFET MOSFET P-Ch 30V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TPCF8104_07 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSコ)
TPCF8104TE85LF 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 30V 6A 8-Pin VS T/R 制造商:Toshiba 功能描述:Trans MOSFET P-CH 30V 6A 8-Pin VS T/R