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參數資料
| 型號： | TN28F020-120 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| 中文描述： | 256K X 8 FLASH 12V PROM, 120 ns, PQCC32 |
| 封裝： | 0.450 X 0.550 INCH, PLASTIC, LCC-32 |
| 文件頁數： | 16/38頁 |
| 文件大?。?/td> | 878K |
| 代理商： | TN28F020-120 |
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28F020
E
16
3.0 DESIGN CONSIDERATIONS
3.1
Two-Line Output Control
Flash memories are often used in larger memory
arrays. Intel provides two read control inputs to
accommodate multiple memory connections. Two-
line control provides for:
a.
the lowest possible memory power dissipation
and,
b.
complete assurance that output bus contention
will not occur.
To efficiently use these two control inputs, an
address decoder output should drive chip enable,
while the system’s read signal controls all flash
memories and other parallel memories. This
assures that only enabled memory devices have
active outputs, while deselected devices maintain
the low power standby condition.
3.2
Power Supply Decoupling
Flash memory power-switching characteristics
require
careful
device
designers are interested in three supply current
(I
CC
) issues—standby, active, and transient current
peaks produced by falling and rising edges of chip
enable. The capacitive and inductive loads on the
device outputs determine the magnitudes of these
peaks.
decoupling.
System
Two-line control and proper decoupling capacitor
selection will suppress transient voltage peaks.
Each device should have a 0.1 μF ceramic
capacitor connected between V
CC
and V
SS
, and
between V
PP
and V
SS
.
Place the high-frequency, low-inherent-inductance
capacitors as close as possible to the devices.
Also, for every eight devices, a 4.7 μF electrolytic
capacitor should be placed at the array’s power
supply connection, between V
CC
and V
SS
. The bulk
capacitor will overcome voltage slumps caused by
printed circuit board trace inductance, and will
supply charge to the smaller capacitors as needed.
3.3
V
PP
Trace on Printed Circuit
Boards
Programming flash memories, while they reside in
the target system, requires that the printed circuit
board designer pay attention to the V
PP
power
supply trace. The V
PP
pin supplies the memory cell
current for programming. Use similar trace widths
and layout considerations given the V
CC
power bus.
Adequate V
PP
supply traces and decoupling will
decrease V
PP
voltage spikes and overshoots.
3.4
Power-Up/Down Protection
The 28F020 is designed to offer protection against
accidental erasure or programming during power
transitions. Upon power-up, the 28F020 is
indifferent as to which power supply, V
PP
or V
CC
,
powers up first.
Power supply sequencing is not
required.
Internal circuitry in the 28F020 ensures
that the command register is reset to the read
mode on power-up.
A system designer must guard against active
writes for V
CC
voltages above V
LKO
when V
PP
is
active. Since both WE# and CE# must be low for a
command write, driving either to V
IH
will inhibit
writes. The control register architecture provides an
added level of protection since alteration of
memory contents only occurs after successful
completion of the two-step command sequences.
3.5
28F020 Power Dissipation
When designing portable systems, designers must
consider battery power consumption not only during
device operation, but also for data retention during
system idle time. Flash nonvolatility increases the
usable battery life of your system because the
28F020 does not consume any power to retain
code or data when the system is off. Table 4
illustrates the power dissipated when updating the
28F020.
相關PDF資料 |
PDF描述 |
|---|---|
| TN28F512-120 | 512K(64Kx8)CMOS FLASH MEMORY |
| TN5C060-45 | 16 MACROCELL CMOS PLD |
| TN5C090-50 | 24 MACROCELL CMOS PLD |
| TN5C090 | 24 MACROCELL CMOS PLD |
| TN5C180 | 48-MACROCELL CMOS PLD |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TN28F020-150 | 制造商:Intel 功能描述:NOR Flash, 256K x 8, 32 Pin, Plastic, PLCC |
| TN28F020-90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| TN28F512-120 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Intel 功能描述: |
| TN29/19/15-3E25 | 制造商:FERROXCUBE 功能描述:FERRITE CORE TOROID 3E25 制造商:FERROXCUBE 功能描述:FERRITE TN29/19/15-3E25 制造商:Yageo / Ferroxcube 功能描述:FERRITE CORE, TOROID, 3E25 制造商:FERROXCUBE 功能描述:FERRITE CORE, TOROID, 3E25; Core Type:Toroid; Core Size:TN29; Material Grade:3E25; Effective Magnetic Path Length:73.2mm; Ae Effective Cross Section Area:73.9mm2; Inductance Factor Al:7000nH; SVHC:No SVHC (18-Jun-2012); External ;RoHS Compliant: Yes |
| TN29/19/7.5 | 制造商:FERROXCUBE 制造商全稱:Ferroxcube International Holding B.V. 功能描述:Ferrite toroids |
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