參數(shù)資料
型號(hào)： TN28F010-90
廠商： INTEL CORP
元件分類： DRAM
英文描述： 28F010 1024K (128K X 8) CMOS FLASH MEMORY
中文描述： 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
封裝： 0.450 X 0.550 INCH, PLASTIC, LCC-32
文件頁(yè)數(shù)： 32/33頁(yè)
文件大?。?/td> 895K
代理商： TN28F010-90
28F010
E
32
4.11
Erase and Programming Performance
Parameter
Notes
Min
Typical
Max
Unit
Chip Erase Time
1, 3, 4
1
10
Sec
Chip Program Time
1, 2, 4
2
12.5
Sec
NOTES:
1.
2.
“Typicals” are not guaranteed, but based on samples from production lots. Data taken at 25 °C, 12.0 V V
PP
.
Minimum byte programming time excluding system overhead is 16 μsec (10 μsec program + 6 μsec write recovery), while
maximum is 400 μsec/byte (16 μsec x 25 loops allowed by algorithm). Max chip programming time is specified lower than
the worst case allowed by the programming algorithm since most bytes program significantly faster than the worst case
byte.
Excludes 00H programming prior to erasure.
Excludes system level overhead.
3.
4.
290207-19
NOTE:
Alternative CE#-Controlled Write Timings also apply to erase operations.
Figure 15. Alternate AC Waveforms for Programming Operations
相關(guān)PDF資料
PDF描述
TN28F010-120 28F010 1024K (128K X 8) CMOS FLASH MEMORY
TN28F010-150 28F010 1024K (128K X 8) CMOS FLASH MEMORY
TN28F020-90 28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F020-150 28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F020-120 28F020 2048K (256K X 8) CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TN28F020-120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F020-150 制造商:Intel 功能描述:NOR Flash, 256K x 8, 32 Pin, Plastic, PLCC
TN28F020-90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F512-120 制造商:Rochester Electronics LLC 功能描述: 制造商:Intel 功能描述:
TN29/19/15-3E25 制造商:FERROXCUBE 功能描述:FERRITE CORE TOROID 3E25 制造商:FERROXCUBE 功能描述:FERRITE TN29/19/15-3E25 制造商:Yageo / Ferroxcube 功能描述:FERRITE CORE, TOROID, 3E25 制造商:FERROXCUBE 功能描述:FERRITE CORE, TOROID, 3E25; Core Type:Toroid; Core Size:TN29; Material Grade:3E25; Effective Magnetic Path Length:73.2mm; Ae Effective Cross Section Area:73.9mm2; Inductance Factor Al:7000nH; SVHC:No SVHC (18-Jun-2012); External ;RoHS Compliant: Yes
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