參數資料
型號： TN28F010-90
廠商： INTEL CORP
元件分類： DRAM
英文描述： 28F010 1024K (128K X 8) CMOS FLASH MEMORY
中文描述： 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
封裝： 0.450 X 0.550 INCH, PLASTIC, LCC-32
文件頁數： 10/33頁
文件大?。?/td> 895K
代理商： TN28F010-90
28F010
E
10
2.2.1.3
Standby
With CE# at a logic-high level, the standby
operation disables most of the 28F010’s circuitry
and
substantially
reduces
consumption. The outputs are placed in a high-
impedance state, independent of the OE# signal. If
the
28F010
is
deselected
programming, or program/erase verification, the
device draws active current until the operation is
terminated.
device
power
during
erasure,
2.2.1.4
Intelligent Identifier Operation
The intelligent identifier operation outputs the
manufacturer code (89H) and device code (B4H).
Programming equipment automatically matches the
device with its proper erase and programming
algorithms.
With CE# and OE# at a logic low level, raising A
9
to
high voltage V
ID
(see
DC Characteristics
) activates
the operation. Data read from locations 0000H and
0001H represent the manufacturer's code and the
device code, respectively.
The manufacturer and device codes can also be
read via the command register, for instances where
the 28F010 is erased and reprogrammed in the
target system. Following a write of 90H to the
command register, a read from address location
0000H outputs the manufacturer code (89H). A
read from address 0001H outputs the device code
(B4H).
2.2.1.5
Write
Device erasure and programming are accomplished
via the command register, when high voltage is
applied to the V
PP
pin. The contents of the register
serve as input to the internal state machine. The
state machine outputs dictate the function of the
device.
The command register itself does not occupy an
addressable memory location. The register is a
latch used to store the command, along with
address and data information needed to execute
the command.
The command register is written by bringing WE# to
a logic-low level (V
IL
), while CE# is low. Addresses
are latched on the falling edge of WE#, while data is
latched on the rising edge of the WE# pulse.
Standard microprocessor write timings are used.
Refer to
AC Characteristics
—Write/Erase/Program
Only Operations
and the erase/programming
waveforms for specific timing parameters.
2.2.2
COMMAND DEFINITIONS
When low voltage is applied to the V
PP
pin, the
contents of the command register default to 00H,
enabling read-only operations.
Placing high voltage on the V
PP
pin enables
read/write operations. Device operations are
selected by writing specific data patterns into the
command register. Table 3 defines these 28F010
register commands.
相關PDF資料
PDF描述
TN28F010-120 28F010 1024K (128K X 8) CMOS FLASH MEMORY
TN28F010-150 28F010 1024K (128K X 8) CMOS FLASH MEMORY
TN28F020-90 28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F020-150 28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F020-120 28F020 2048K (256K X 8) CMOS FLASH MEMORY
相關代理商/技術參數
參數描述
TN28F020-120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F020-150 制造商:Intel 功能描述:NOR Flash, 256K x 8, 32 Pin, Plastic, PLCC
TN28F020-90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F512-120 制造商:Rochester Electronics LLC 功能描述: 制造商:Intel 功能描述:
TN29/19/15-3E25 制造商:FERROXCUBE 功能描述:FERRITE CORE TOROID 3E25 制造商:FERROXCUBE 功能描述:FERRITE TN29/19/15-3E25 制造商:Yageo / Ferroxcube 功能描述:FERRITE CORE, TOROID, 3E25 制造商:FERROXCUBE 功能描述:FERRITE CORE, TOROID, 3E25; Core Type:Toroid; Core Size:TN29; Material Grade:3E25; Effective Magnetic Path Length:73.2mm; Ae Effective Cross Section Area:73.9mm2; Inductance Factor Al:7000nH; SVHC:No SVHC (18-Jun-2012); External ;RoHS Compliant: Yes
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯系方式

*
*
*